UMC's enhanced CMOS image
sensor process is based on our generic mixed-mode process.
The unique proprietary technology addresses the needs of today's
most sophisticated camera-on-a-chip designers that produce
chips for high-end, still life and video digital cameras,
and scanners. Because of its lower than average dark current
level, UMC's sensor process allows image sensors designed
in its process to detect light at lower light conditions.
The result is image quality that is superior to any other
foundry CMOS technology. UMC's CMOS image sensor process is
available from 0.5um down to 0.11um technologies to power
customer designs ranging from VGA applications to megabit
resolution products.
Advanced
CIS Technology Features
Ultra-PD (buried PD) architecture
4um or 7um P-epi on P+
substrate
Shallow Trench Isolation
Retrograded twin well
(Deep N-well is optional)
Dual gate oxides
Poly gate with CoSi2
CoSi2 S/D
3~4 Al metal layers with
thin backend process (110nm):
0.28um
pitch for M1 and mid Metals
1.7um
film stack (from photodiode to color filter)
Color Filter (CF) / Microlens
(uL) in-house capability
Technologies
for Broad Applications
0.13um/0.11um
CIS Device Family
Color
Filter & Microlens
For the technologies of 0.18um and beyond
Please contact your account manager of UMC for further details.
For new customers, please contact: sales@umc.com