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    0.25 um and above
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    CMOS Image
Sensor
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CMOS Image Sensor Technology


UMC's enhanced CMOS image sensor process is based on our generic mixed-mode process. The unique proprietary technology addresses the needs of today's most sophisticated camera-on-a-chip designers that produce chips for high-end, still life and video digital cameras, and scanners. Because of its lower than average dark current level, UMC's sensor process allows image sensors designed in its process to detect light at lower light conditions. The result is image quality that is superior to any other foundry CMOS technology. UMC's CMOS image sensor process is available from 0.5um down to 0.18um technologies to power customer designs ranging from VGA applications to megabit resolution products.

0.25um

   Voltage    2.5V/3.3V
   Poly/Metal Layer    1P3M, extra metal layer is available
   Substrate    P-Type Epi, 8~12 ohm-cm
   Well    Two masks for Twin Well
   P substrate for Sensor
   Gate Ox    2.5V:50A; 3.3V:65A
   Salicide Poly    2500A
   Dark Current    15~50 mV/sec
   Sensitivity    1V/lux,sec
   QE% B&W w/o u-lens    50~60%
   Resolution    ~3M

0.35um

   Voltage    3.3V
   Poly/Metal Layer    1P3M, extra metal/poly layer is available
   Substrate    P-Type Epi, 8~12 ohm-cm
   Well    Two masks for Twin Well
   P substrate for Sensor
   Gate Ox    65A
   Salicide Poly    3000A
   Dark Current    15~50 mV/sec
   Sensitivity    1V/lux,sec
   QE% B&W w/o u-lens    50~60%
   Resolution    ~2M
For the technologies of 0.18um and beyond
Please contact your account manager of UMC for further details.
For new customers, please contact: sales@umc.com