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CMOS
Image Sensor Technology
UMC's enhanced CMOS image sensor process is based
on our generic mixed-mode process. The unique proprietary technology addresses
the needs of today's most sophisticated camera-on-a-chip designers
that produce chips for high-end, still life and video digital cameras,
and scanners. Because of its lower than average dark current level,
UMC's sensor process allows image sensors designed in its process
to detect light at lower light conditions. The result is image quality
that is superior to any other foundry CMOS technology. UMC's CMOS
image sensor process is available from 0.5um down to 0.18um technologies
to power customer designs ranging from VGA applications to megabit
resolution products.
0.25um
| Voltage |
2.5V/3.3V |
| Poly/Metal Layer |
1P3M, extra metal
layer is available |
| Substrate |
P-Type Epi, 8~12
ohm-cm |
| Well |
Two
masks for Twin Well
P substrate for Sensor |
| Gate Ox |
2.5V:50A; 3.3V:65A |
| Salicide Poly |
2500A |
| Dark Current |
15~50 mV/sec |
| Sensitivity |
1V/lux,sec |
| QE% B&W w/o
u-lens |
50~60% |
| Resolution |
~3M |
0.35um
| Voltage |
3.3V |
| Poly/Metal
Layer |
1P3M,
extra metal/poly layer is available |
| Substrate |
P-Type
Epi, 8~12 ohm-cm |
| Well |
Two
masks for Twin Well
P substrate for Sensor |
| Gate
Ox |
65A |
| Salicide
Poly |
3000A |
| Dark
Current |
15~50
mV/sec |
| Sensitivity |
1V/lux,sec |
| QE%
B&W w/o u-lens |
50~60% |
| Resolution |
~2M |
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